STB24N65M2
MOSFET N-CH 650V 16A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB24N65M2 is an N-channel Power MOSFET from the MDmesh™ M2 series. This device offers a 650V drain-source breakdown voltage and a continuous drain current capability of 16A at 25°C (Tc). The STB24N65M2 features a low on-resistance of 230mOhm maximum at 8A and 10V gate drive. It is supplied in a TO-263-3, D2PAK surface mount package, suitable for applications requiring efficient power switching. Typical parameters include a gate charge of 29 nC at 10V and input capacitance of 1060 pF at 100V. This component is designed for high-efficiency power conversion applications across various industries including industrial power supplies, server power, and renewable energy systems. The maximum power dissipation is 150W (Tc).
Additional Information
Series: MDmesh™ M2RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1060 pF @ 100 V |
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