STB23NM60ND
MOSFET N-CH 600V 19.5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB23NM60ND is an N-channel Power MOSFET from the FDmesh™ II series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 19.5A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The device exhibits a low on-resistance (Rds On) of 180mOhm at 10A and 10V Vgs, achieved with a 10V drive voltage. Key electrical characteristics include a typical input capacitance (Ciss) of 2050pF at 50V and a gate charge (Qg) of 70nC at 10V. The STB23NM60ND is housed in a TO-263-3, D2PAK (2 Leads + Tab) surface mount package, suitable for demanding thermal management. This MOSFET is commonly utilized in power factor correction (PFC), switch-mode power supplies (SMPS), and industrial motor control applications. The maximum operating junction temperature is 150°C, with a ±25V maximum gate-source voltage.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2050 pF @ 50 V |
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