STB230NH03L
MOSFET N-CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB230NH03L is an N-Channel STripFET™ Power MOSFET designed for high-efficiency power switching applications. This component features a 30 V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 80 A at 25°C (Tc). With a low Rds On of 3 mOhm at 40 A and 10 V Vgs, it minimizes conduction losses. The device offers a maximum power dissipation of 300 W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include a Gate Charge (Qg) of 72 nC (max) at 10 V and an Input Capacitance (Ciss) of 4700 pF (max) at 10 V. The STB230NH03L is supplied in a TO-263-3, D2PAK surface mount package, suitable for demanding applications in automotive and industrial power management. It supports gate drive voltages from 4.5 V to 10 V, with a maximum Vgs of ±20 V.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 10 V |
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