STB22NS25ZT4
MOSFET N-CH 250V 22A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB22NS25ZT4 is a high-performance N-Channel Power MOSFET from the MESH OVERLAY™ series. Designed for demanding applications, this component features a 250V drain-source voltage and a continuous drain current capability of 22A at 25°C (Tc). Its low on-resistance of 150mOhm maximum at 11A and 10V gate drive ensures efficient power conversion. With a maximum power dissipation of 135W (Tc), it is suitable for power management in various industrial sectors, including automotive, power supplies, and motor control. The device is packaged in a TO-263-3, D2PAK surface-mount configuration and operates across a temperature range of -55°C to 150°C. Key electrical characteristics include a gate charge of 151 nC (max) at 10V and input capacitance of 2400 pF (max) at 25V.
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 135W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 151 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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