STB22NM60N
MOSFET N-CH 600V 16A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB22NM60N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 16 A at 25°C (Tc). The device features a low on-resistance (Rds On) of 220 mOhm maximum at 8 A and 10 V. With a maximum power dissipation of 125 W (Tc), it is designed for surface mounting in the TO-263 (D2PAK) package. Key parameters include a gate charge (Qg) of 44 nC maximum at 10 V and input capacitance (Ciss) of 1300 pF maximum at 50 V. This device is suitable for applications in power factor correction, switch mode power supplies, and industrial power systems. It operates at a maximum junction temperature of 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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