STB22N60M6
MOSFET N-CH 600V 15A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB22N60M6 is an N-Channel Power MOSFET from the MDmesh™ M6 series. This component offers a 600V drain-to-source voltage and a continuous drain current of 15A (Tc) at 25°C. With a maximum power dissipation of 130W (Tc), it features a low Rds(on) of 230mOhm at 7.5A and 10V. The device is supplied in a TO-263 (D2PAK) surface mount package, facilitating efficient thermal management. Key electrical parameters include a typical gate charge of 20 nC at 10V and input capacitance (Ciss) of 800 pF at 100V. This MOSFET is suitable for applications in power supplies, industrial automation, and renewable energy systems.
Additional Information
Series: MDmesh™ M6RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 4.75V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 100 V |
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