STB21NM60ND
MOSFET N-CH 600V 17A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB21NM60ND is an N-channel Power MOSFET from the FDmesh™ II series. This device offers a 600 V drain-to-source breakdown voltage and a continuous drain current capability of 17 A at 25°C (Tc). Featuring a low on-resistance of 220 mOhm (max) at 8.5 A and 10 V Vgs, it is designed for efficient power switching applications. The STB21NM60ND has a maximum power dissipation of 140 W (Tc) and is housed in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 60 nC (max) at 10 V and input capacitance (Ciss) of 1800 pF (max) at 50 V, facilitating its use in demanding power conversion circuits. This component finds application in industries such as industrial power supplies and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V |
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