STB21NM60N-1
MOSFET N-CH 600V 17A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB21NM60N-1 is an N-Channel Power MOSFET from the MDmesh™ series, designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 600 V and a continuous drain current (Id) of 17 A at 25°C, with a maximum power dissipation of 140 W (Tc). The STB21NM60N-1 offers a low on-resistance of 220 mOhm at 8.5 A and 10 V gate drive, and a typical gate charge of 66 nC at 10 V. Its input capacitance (Ciss) is a maximum of 1900 pF at 50 V. This device is housed in an I2PAK package with through-hole mounting. The STB21NM60N-1 is commonly utilized in power factor correction (PFC), switch mode power supplies (SMPS), and industrial power applications.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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