STB21NM60N
MOSFET N-CH 600V 17A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB21NM60N is an N-Channel Power MOSFET from the MDmesh™ series. This component offers a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 17A at 25°C (Tc) with a maximum power dissipation of 140W (Tc). The device features a low on-resistance (Rds On) of 220mOhm at 8.5A and 10V, with a gate charge (Qg) of 66 nC at 10V. Designed for surface mounting, it is housed in a D2PAK (TO-263-3, D2PAK) package. This MOSFET is suitable for applications in industries such as power supplies, lighting, and industrial motor control. The maximum operating temperature is 150°C (TJ) with a gate-source voltage (Vgs) limit of ±25V.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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