STB21NM50N-1
MOSFET N-CH 500V 18A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB21NM50N-1 is an N-Channel Power MOSFET from the MDmesh™ II series. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 18A at 25°C. It offers a low on-resistance of 190mOhm maximum at 9A, 10V, with a gate drive voltage of 10V. The device boasts a maximum power dissipation of 140W at 25°C and an operating junction temperature of 150°C. Key capacitive parameters include Input Capacitance (Ciss) of 1950 pF maximum at 25V and Gate Charge (Qg) of 65 nC maximum at 10V. Packaged in an I2PAK (TO-262-3 Long Leads), the STB21NM50N-1 is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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