STB21NM50N
MOSFET N-CH 500V 18A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB21NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This component offers a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 18A (Tc) at 25°C. The device features a maximum On-Resistance (Rds On) of 190mOhm at 9A and 10V gate drive. With a maximum power dissipation of 140W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding applications. The STB21NM50N is packaged in a TO-263-3, D2PAK format for surface mounting and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 65 nC @ 10V and input capacitance (Ciss) of 1950 pF @ 25V. This MOSFET is commonly utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1950 pF @ 25 V |
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