STB21NK50Z
MOSFET N-CH 500V 17A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB21NK50Z is a SuperMESH™ N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 17A at 25°C (Tc). The STB21NK50Z offers a low on-resistance (Rds On) of 270mOhm at 8.5A and 10V, contributing to reduced conduction losses. With a maximum power dissipation of 190W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding power conversion tasks. The MOSFET is housed in a TO-263-3, D2PAK package for surface mounting and is AEC-Q101 qualified, making it appropriate for automotive applications. Key parameters include a gate charge (Qg) of 119 nC at 10V and input capacitance (Ciss) of 2600 pF at 25V.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
| Qualification | AEC-Q101 |
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