STB20NM60D
MOSFET N-CH 600V 20A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB20NM60D is a 600V N-Channel Power MOSFET from the FDmesh™ series. This device is packaged in a surface-mount D2PAK (TO-263-3, D2PAK) and is supplied on tape and reel. It offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 192W (Tc). Key electrical characteristics include a drain-source voltage (Vdss) of 600V, a maximum on-resistance (Rds On) of 290mOhm at 10A and 10V, and a gate charge (Qg) of 52 nC at 10V. Input capacitance (Ciss) is rated at a maximum of 1300 pF at 25V. This component is suitable for applications in power supplies, lighting, and industrial motor control. The operating temperature range is -65°C to 150°C (TJ).
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
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