STB20NM60-1
MOSFET N-CH 600V 20A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB20NM60-1 is a 600V N-Channel Power MOSFET from the MDmesh™ series. This device offers a continuous drain current of 20A at 25°C (Tc) and a maximum power dissipation of 192W (Tc). Key electrical characteristics include a Vgs(th) of 5V @ 250µA, a Qg of 54 nC @ 10V, and a Ciss of 1500 pF @ 25V. The Rds On is specified at a maximum of 290mOhm at 10A, 10V. Packaged in an I2PAK (TO-262-3 Long Leads, TO-262AA) for through-hole mounting, this MOSFET is suitable for applications requiring high voltage and efficient switching. Industries benefiting from this component include power supplies, industrial motor control, and lighting.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 25 V |
Request a Quote
Clients Also Buy
STB43N65M5
MOSFET N-CH 650V 42A D2PAK
STP12NM50FP
MOSFET N-CH 500V 12A TO220FP
STP12NM50
MOSFET N-CH 500V 12A TO220AB
