STB20NM50FDT4
MOSFET N-CH 500V 20A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB20NM50FDT4 is an N-Channel Power MOSFET from the FDmesh™ series, designed for efficient switching in demanding applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 20A at 25°C (Tc), with a maximum power dissipation of 192W (Tc). The Rds On is specified at a maximum of 250mOhm when conducting 10A with a 10V gate-source voltage. Key characteristics include a total gate charge (Qg) of 53 nC at 10V and input capacitance (Ciss) of 1380 pF at 25V. The device is offered in a surface mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) package, supplied on tape and reel. This MOSFET is suitable for use in power supply, industrial motor control, and lighting applications.
Additional Information
Series: FDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 25 V |
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