STB20NM50-1
MOSFET N-CH 550V 20A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics MDmesh™ STB20NM50-1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This device features a drain-source voltage (Vdss) of 550V and a continuous drain current (Id) of 20A at 25°C (Tc). With a maximum power dissipation of 192W (Tc), it offers excellent thermal performance. The STB20NM50-1 boasts a low on-resistance (Rds On) of 250mOhm at 10A and 10V, minimizing conduction losses. Its typical applications span across power supplies, industrial motor control, and renewable energy systems. The device is packaged in an I2PAK (TO-262-3 Long Leads, I2PAK, TO-262AA) for through-hole mounting. Key parameters include a gate charge (Qg) of 56 nC at 10V and input capacitance (Ciss) of 1480 pF at 25V.
Additional Information
Series: MDmesh™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 192W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1480 pF @ 25 V |
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