STB20NK50ZT4
MOSFET N-CH 500V 17A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB20NK50ZT4 SuperMESH™ N-Channel Power MOSFET, designed for demanding applications. This device features a 500V drain-source breakdown voltage and a continuous drain current rating of 17A at 25°C (Tc), with a maximum power dissipation of 190W (Tc). The STB20NK50ZT4 offers a low on-resistance of 270mOhm at 8.5A and 10V gate drive. Key electrical characteristics include a gate charge of 119 nC (max) at 10V and an input capacitance of 2600 pF (max) at 25V. The MOSFET is housed in a TO-263-3, D2PAK surface-mount package, suitable for automated assembly. This component finds application in power factor correction, switch mode power supplies, and general-purpose power switching across various industrial sectors. It operates at junction temperatures up to 150°C.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 8.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 119 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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