STB200NF04T4
MOSFET N-CH 40V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB200NF04T4 is an N-Channel STripFET™ II Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous Current rating of 120 A at 25°C (Tc). With a low on-resistance of 3.7 mOhm at 90 A and 10 V (Vgs), it offers efficient power handling with a maximum power dissipation of 310 W (Tc). The device utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. Key electrical parameters include a Gate Charge (Qg) of 210 nC at 10 V and an input capacitance (Ciss) of 5100 pF at 25 V. The STB200NF04T4 is suitable for demanding power conversion systems across various industrial sectors.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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