STB200NF04L-1
MOSFET N-CH 40V 120A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB200NF04L-1 is a N-Channel Power MOSFET from the STripFET™ II series, designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 120A at 25°C, with a maximum power dissipation of 300W. The low on-resistance (Rds On) of 3.8mOhm at 50A and 10V Vgs ensures minimal conduction losses. With a Gate Charge (Qg) of 90 nC at 4.5V and an input capacitance (Ciss) of 6400 pF at 25V, it offers efficient switching performance. The STB200NF04L-1 is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package, suitable for through-hole mounting. Its operating temperature range is -55°C to 175°C. This MOSFET is commonly utilized in automotive, industrial power control, and power supply designs.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 25 V |
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