STB200NF04-1
MOSFET N-CH 40V 120A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB200NF04-1 is an N-Channel STripFET™ II Power MOSFET featuring a 40V drain-source voltage and a continuous drain current of 120A at 25°C (Tc). This device offers a low on-resistance of 3.7mOhm maximum at 90A and 10V Vgs, with a maximum power dissipation of 310W (Tc). The STB200NF04-1 utilizes MOSFET technology and is housed in an I2PAK package with through-hole mounting. Key parameters include a gate charge of 210 nC @ 10V and input capacitance of 5100 pF @ 25V. It operates within an extended temperature range of -55°C to 175°C (TJ). This component is commonly employed in automotive and industrial applications requiring robust power switching capabilities.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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