STB200N6F3
MOSFET N-CH 60V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB200N6F3 is an N-Channel STripFET™ MOSFET designed for demanding power applications. This component features a 60V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc). The low on-resistance (Rds On) of 3.6mOhm at 60A and 10V (Vgs) is achieved with a 10V gate drive. Key parameters include a gate charge (Qg) of 100 nC and input capacitance (Ciss) of 6800 pF at 25V. This device supports a maximum power dissipation of 330W (Tc) and operates within a junction temperature range of -55°C to 175°C. The STB200N6F3 is housed in a TO-263-3, D2PAK package, suitable for surface mounting and supplied on tape and reel. Applications include automotive systems and industrial power supplies.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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