STB200N4F3
MOSFET N-CH 40V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB200N4F3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum continuous power dissipation of 300W (Tc). The STB200N4F3 exhibits a low on-resistance (Rds On) of 4mOhm at 80A and 10V gate-source voltage (Vgs). It is packaged in a TO-263-3, D2PAK (2 Leads + Tab) surface-mount configuration, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 75nC (Max) at 10V and an input capacitance (Ciss) of 5100pF (Max) at 25V. This MOSFET is suitable for use in automotive, industrial, and power supply applications requiring robust performance and thermal management.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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