STB19NM65N
MOSFET N-CH 650V 15.5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB19NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This device offers a Drain-Source Voltage (Vdss) of 650 V and a continuous Drain Current (Id) of 15.5 A at 25°C (Tc). The STB19NM65N features a low on-resistance of 270 mOhm maximum at 7.75 A and 10 V, with a gate charge (Qg) of 55 nC maximum at 10 V. Designed for surface mounting in a TO-263-3, D2PAK package, it dissipates up to 150 W at 25°C (Tc) and operates at junction temperatures up to 150°C. This component is suitable for applications in power factor correction (PFC), switch mode power supplies (SMPS), and industrial power systems.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 7.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V |
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