STB190NF04T4
MOSFET N-CH 40V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB190NF04T4 is an N-Channel STripFET™ III series power MOSFET designed for high-efficiency switching applications. This component features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 120A at 25°C (Tc). Its low on-resistance (Rds On) of 4.3mOhm at 95A and 10V gate drive voltage ensures minimal conduction losses. The device offers a maximum power dissipation of 310W (Tc) and a junction temperature range of -55°C to 175°C, suitable for demanding thermal environments. Key electrical parameters include a gate charge (Qg) of 130 nC (max) at 5V and input capacitance (Ciss) of 5800 pF (max) at 25V. The STB190NF04T4 is packaged in a D2PAK (TO-263-3) surface-mount configuration, supplied on tape and reel. This MOSFET is widely utilized in automotive, industrial power supply, and motor control applications where robust performance and thermal management are critical.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 95A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5800 pF @ 25 V |
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