STB18NM60ND
MOSFET N-CH 600V 13A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB18NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 13A at 25°C (Tc). With a maximum on-resistance (Rds On) of 290mOhm at 6.5A and 10V Vgs, it offers efficient switching performance. The MOSFET is housed in a TO-263 (D2PAK) surface-mount package designed for optimal thermal management, with a power dissipation of 110W (Tc). Key electrical parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 1030 pF at 50V. This component is suitable for applications in power factor correction, switch mode power supplies, and lighting.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 50 V |
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