STB18NM60N
MOSFET N-CH 600V 13A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB18NM60N is a 600V N-channel Power MOSFET from the MDmesh™ II series. This device features a continuous drain current capability of 13A (Tc) and a maximum power dissipation of 110W (Tc), making it suitable for high-efficiency power switching applications. Key parameters include a low Rds(on) of 285mOhm at 6.5A and 10V, a gate charge of 35nC at 10V, and an input capacitance of 1000pF at 50V. The STB18NM60N is packaged in a TO-263 (D2PAK) surface-mount form factor, ideal for automated assembly. Operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial power supplies, lighting, and automotive applications where robust performance and efficiency are critical.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 285mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 50 V |
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