STB18N55M5
MOSFET N-CH 550V 16A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB18N55M5 is an N-Channel Power MOSFET from the MDmesh™ V series. This device features a high breakdown voltage of 550 V and a continuous drain current capability of 16 A at 25°C (Tc). The STB18N55M5 offers a low on-resistance of 192 mOhm maximum at 8 A and 10 V gate drive. Designed for surface mounting, it is housed in a TO-263 (D2PAK) package, providing efficient thermal management with a maximum power dissipation of 110 W (Tc). Key parameters include a gate charge of 31 nC (max) at 10 V and input capacitance of 1260 pF (max) at 100 V. This component is suitable for applications in power factor correction, switch mode power supplies, and general-purpose power switching across various industrial sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 550 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 100 V |