STB180N55F3
MOSFET N-CH 55V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB180N55F3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 120A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The STB180N55F3 offers a low on-resistance (Rds On) of 3.5mOhm at 60A and 10V gate drive, contributing to reduced conduction losses. Its gate charge (Qg) is rated at 100 nC maximum at 10V, and input capacitance (Ciss) is 6800 pF maximum at 25V. The MOSFET is housed in a TO-263-3, D2PAK surface mount package, suitable for demanding thermal management. Operating temperature range is specified from -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial power supply, and motor control applications.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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