STB16PF06LT4
MOSFET P-CH 60V 16A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB16PF06LT4 is a P-Channel STripFET™ MOSFET designed for high-efficiency power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 16A at 25°C (Tc). Its low on-resistance, specified as 125mOhm maximum at 8A and 10V Vgs, minimizes conduction losses. The device offers a maximum power dissipation of 70W (Tc) and is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package. Key parameters include a Gate Charge (Qg) of 15.5 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 630pF at 25V Vds. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 70W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 25 V |
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