STB16NM50N
MOSFET N-CH 500V 15A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB16NM50N is an N-Channel Power MOSFET from the MDmesh™ II series, designed for high-efficiency applications. This device features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 15A at 25°C (Tc), with a maximum power dissipation of 125W at the same temperature. The STB16NM50N offers a low on-resistance (Rds On) of 260mOhm at 7.5A and 10V, and a typical gate charge (Qg) of 38 nC at 10V. It is packaged in a surface-mount D2PAK (TO-263-3, D2PAK) and operates at a junction temperature up to 150°C. This component is suitable for use in power factor correction, switch-mode power supplies, and lighting applications.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |
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