STB16NF25
MOSFET N-CH 30V 14.5A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB16NF25 is an N-Channel Power MOSFET. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 14.5 A at 25°C (Tc). The Rds(on) is specified at a maximum of 4 mOhm when driven at 30 A and 10 Vgs. Gate Charge (Qg) is a maximum of 40 nC at 4.5 Vgs, and Input Capacitance (Ciss) is 4490 pF at 12 Vds. The STB16NF25 is housed in a TO-263-3, D2PAK surface mount package, supplied on tape and reel. This component is suitable for applications in industrial and computing power supplies, as well as automotive power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4490 pF @ 12 V |
Request a Quote
Clients Also Buy
STP80NF10
MOSFET N-CH 100V 80A TO220AB
STP7LN80K5
MOSFET N-CH 800V 5A TO220
STP19NM50N
MOSFET N-CH 500V 14A TO220AB
