STB16N65M5
MOSFET N-CH 650V 12A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB16N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series, designed for demanding high-voltage applications. This component features a continuous drain current of 12A at 25°C (Tc) and a maximum power dissipation of 90W (Tc), making it suitable for power factor correction (PFC) and switch-mode power supply (SMPS) designs. The TO-263-3 (D2PAK) surface mount package ensures efficient thermal management. Key electrical characteristics include a low Rds On of 299mOhm at 6A, 10V, and a gate charge of 31nC at 10V. This device finds application in industries such as consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 100 V |
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