STB160NF3LLT4
MOSFET N-CH 30V 160A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB160NF3LLT4 is an N-Channel STripFET™ III Power MOSFET designed for high-current applications. This TO-263AB (D2PAK) device features a low on-resistance of 3.3mOhm at 80A and 10V Vgs, with a continuous drain current capability of 160A at 25°C (Tc). The drain-to-source voltage is rated at 30V, and it supports a gate drive voltage range from 4.5V to 10V for optimal Rds(on). With a maximum power dissipation of 300W (Tc) and a gate charge of 110 nC at 4.5V, this MOSFET is suitable for demanding power management tasks. It is supplied in Tape & Reel packaging, making it efficient for automated assembly processes. This component is frequently utilized in automotive, industrial power supplies, and high-power switching applications.
Additional Information
Series: STripFET™ IIIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5500 pF @ 25 V |
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