STB160N75F3
MOSFET N-CH 75V 120A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ STB160N75F3 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) rating of 120A at 25°C (Tc). The STB160N75F3 boasts a low on-resistance of 4mOhm maximum at 60A and 10V gate drive. Its robust construction supports a maximum power dissipation of 330W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). The component is housed in a surface-mount D2PAK (TO-263-3) package, supplied on tape and reel. Key electrical characteristics include a Gate Charge (Qg) of 85 nC (max) at 10V and Input Capacitance (Ciss) of 6750 pF (max) at 25V. This MOSFET is suitable for use in demanding applications within the automotive and industrial sectors.
Additional Information
Series: STripFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 25 V |
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