STB15NM60ND
MOSFET N-CH 600V 14A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB15NM60ND is an N-Channel Power MOSFET from the FDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 600V and a continuous Drain Current (Id) of 14A at 25°C (Tc), with a maximum power dissipation of 125W (Tc). The Rds On is specified at a maximum of 299mOhm at 7A and 10V Vgs. Key characteristics include an input capacitance (Ciss) of 1250pF at 50V Vds and a gate charge (Qg) of 40nC at 10V Vgs. It is housed in a TO-263-3, D2PAK surface mount package and operates at junction temperatures up to 150°C. This component is utilized in applications requiring high voltage switching, such as power supplies and industrial motor control.
Additional Information
Series: FDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 299mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 50 V |
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