STB15NK50ZT4
MOSFET N-CH 500V 14A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB15NK50ZT4 is an N-Channel SuperMESH™ Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 500V and a continuous Drain Current (Id) of 14A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The Rds On is specified at 340mOhm maximum at 7A and 10V gate drive. Key parameters include Gate Charge (Qg) of 106 nC at 10V and Input Capacitance (Ciss) of 2260 pF at 25V. The device is housed in a TO-263-3, D2PAK surface mount package and operates within a temperature range of -50°C to 150°C (TJ). This MOSFET is suitable for use in power supply, lighting, and industrial applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -50°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260 pF @ 25 V |
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