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STB15N65M5

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STB15N65M5

MOSFET N-CH 650V 11A D2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STB15N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This device features a low on-resistance of 340mOhm at 5.5A and 10V Vgs, with a continuous drain current of 11A at 25°C. The STB15N65M5 offers 85W of power dissipation and a maximum junction temperature of 150°C. Key parameters include a gate charge of 22 nC at 10V and input capacitance of 810 pF at 100V. The MOSFET is packaged in a TO-263 (D2PAK) surface mount configuration, supplied on tape and reel. Applications for this component include power factor correction, switch mode power supplies, and high-efficiency converters across various industrial and consumer electronics sectors.

Additional Information

Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C11A (Tc)
Rds On (Max) @ Id, Vgs340mOhm @ 5.5A, 10V
FET Feature-
Power Dissipation (Max)85W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds810 pF @ 100 V

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