STB15N65M5
MOSFET N-CH 650V 11A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB15N65M5 is a 650V N-Channel Power MOSFET from the MDmesh™ V series. This device features a low on-resistance of 340mOhm at 5.5A and 10V Vgs, with a continuous drain current of 11A at 25°C. The STB15N65M5 offers 85W of power dissipation and a maximum junction temperature of 150°C. Key parameters include a gate charge of 22 nC at 10V and input capacitance of 810 pF at 100V. The MOSFET is packaged in a TO-263 (D2PAK) surface mount configuration, supplied on tape and reel. Applications for this component include power factor correction, switch mode power supplies, and high-efficiency converters across various industrial and consumer electronics sectors.
Additional Information
Series: MDmesh™ VRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 100 V |
Request a Quote
Clients Also Buy
STD18N55M5
MOSFET N-CH 550V 16A DPAK
STD18N65M5
MOSFET N-CH 650V 15A DPAK
STF45N65M5
MOSFET N-CH 650V 35A TO220FP
