STB155N3LH6
MOSFET N-CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB155N3LH6, an N-Channel MOSFET from the DeepGATE™ and STripFET™ VI series, is engineered for demanding applications. This component features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The low on-resistance (Rds On) of 3mOhm at 40A and 10V drive voltage, coupled with a gate charge (Qg) of 80 nC at 5V, ensures efficient switching performance. With a maximum input capacitance (Ciss) of 3800 pF at 25V and a package designed for surface mounting, the TO-263-3, D2PAK (TO-263AB) allows for robust thermal management. This MOSFET is suitable for use in power management, industrial, and automotive sectors. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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