STB155N3H6
MOSFET N-CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
Quality Control: Learn More
STMicroelectronics STB155N3H6 is an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series. This component offers a 30V drain-source voltage and a continuous drain current of 80A at 25°C (Tc). It features a low on-resistance of 3mOhm at 40A and 10V Vgs, and a maximum power dissipation of 110W (Tc). With a gate charge of 62 nC and input capacitance of 3650 pF, the STB155N3H6 is suitable for applications requiring efficient switching. The device is housed in a TO-263-3, D2PAK surface mount package, designed for thermal performance. Operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power supply, automotive, and industrial applications.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
Request a Quote
Clients Also Buy
STL6N3LLH6
MOSFET N-CH 30V POWERFLAT
STD10P6F6
MOSFET P CH 60V 10A DPAK
STL12P6F6
MOSFET P-CH 60V 4A POWERFLAT
