STB150NF04
MOSFET N-CH 40V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II STB150NF04 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The STB150NF04 exhibits a low on-resistance (Rds On) of 7mOhm at 40A and 10V gate drive, coupled with a typical gate charge of 150 nC at 10V. It offers a high maximum junction temperature of 175°C and a ±20V maximum gate-source voltage. Packaged in a TO-263-3, D2PAK (TO-263AB) for surface mounting, this component is suitable for automotive, industrial, and power supply applications.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 25 V |
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