STB150N3LH6
MOSFET N CH 30V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB150N3LH6, an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series, offers robust performance in a TO-263 (D2PAK) surface-mount package. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 110 W (Tc). The STB150N3LH6 boasts a low on-resistance (Rds On) of 3 mOhm at 40 A and 10 V, supported by a gate charge (Qg) of 80 nC at 10 V. Input capacitance (Ciss) is rated at 3800 pF at 25 V. Designed for efficient switching, this MOSFET is suitable for applications in automotive and industrial power management. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20V. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
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