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STB150N3LH6

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STB150N3LH6

MOSFET N CH 30V 80A D2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

STMicroelectronics STB150N3LH6, an N-Channel Power MOSFET from the DeepGATE™, STripFET™ VI series, offers robust performance in a TO-263 (D2PAK) surface-mount package. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 80 A at 25°C (Tc), with a maximum power dissipation of 110 W (Tc). The STB150N3LH6 boasts a low on-resistance (Rds On) of 3 mOhm at 40 A and 10 V, supported by a gate charge (Qg) of 80 nC at 10 V. Input capacitance (Ciss) is rated at 3800 pF at 25 V. Designed for efficient switching, this MOSFET is suitable for applications in automotive and industrial power management. It operates across a temperature range of -55°C to 175°C (TJ) and supports gate drive voltages from 5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20V. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: DeepGATE™, STripFET™ VIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)110W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3800 pF @ 25 V

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