STB14NM65N
MOSFET N-CH 650V 12A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB14NM65N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 650V and a continuous drain current (Id) of 12A at 25°C (Tc). With a maximum power dissipation of 125W (Tc) and an Rds(on) of 380mOhm at 6A and 10V, it is designed for efficient switching. The MOSFET is packaged in a TO-263-3, D2PAK (TO-263AB) for surface mounting and is supplied on tape and reel. Key parameters include a gate charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 1300 pF at 50V. This component is suitable for applications in power supplies and industrial power systems. The operating temperature range is up to 150°C (TJ).
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
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