STB14NK50Z-1
MOSFET N-CH 500V 14A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB14NK50Z-1 is a SuperMESH™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 500V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 14A at 25°C case temperature. With a maximum on-resistance (Rds On) of 380mOhm at 6A and 10V Vgs, it delivers low conduction losses. The STB14NK50Z-1 offers a maximum power dissipation of 150W (Tc) and utilizes a robust I2PAK (TO-262-3 Long Leads) through-hole package. Key electrical parameters include a 92nC gate charge (Qg) and 2000pF input capacitance (Ciss). This component is suitable for use in industrial power supplies, solar inverters, and motor control applications.
Additional Information
Series: SuperMESH™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 100µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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