STB141NF55-1
MOSFET N-CH 55V 80A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STripFET™ II N-Channel Power MOSFET, part number STB141NF55-1, offers a drain-source breakdown voltage of 55V and a continuous drain current rating of 80A at 25°C (Tc). This device features a low on-resistance of 8mOhm maximum at 40A, 10V, enabled by its STripFET™ II technology. With a maximum power dissipation of 300W (Tc), it is suitable for demanding applications. The STB141NF55-1 is packaged in an I2PAK (TO-262-3 Long Leads) for through-hole mounting. Key electrical parameters include a gate charge (Qg) of 142 nC at 10V and input capacitance (Ciss) of 5300 pF at 25V, 25V. This component finds application in power supplies, automotive, and industrial power control systems. It operates across a junction temperature range of -55°C to 175°C.
Additional Information
Series: STripFET™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 142 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 25 V |
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