STB13NM50N-1
MOSFET N-CH 500V 12A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II STB13NM50N-1 is a 500V N-Channel Power MOSFET. This device is optimized for high efficiency in power switching applications, offering a continuous drain current of 12A at 25°C (12A at Tc) and a maximum power dissipation of 100W (Tc). It features a low on-resistance (Rds On) of 320mOhm at 6A, 10V, and a gate charge of 30 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 960 pF at 50V. Designed for through-hole mounting, the STB13NM50N-1 is housed in an I2PAK (TO-262-3 Long Leads, TO-262AA) package. Typical applications include industrial power supplies and consumer electronics. The maximum gate-source voltage is ±25V, with a threshold voltage (Vgs(th)) of 4V at 250µA. The junction temperature operates up to 150°C.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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