STB13NM50N
MOSFET N-CH 500V 12A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB13NM50N is an N-Channel Power MOSFET from the MDmesh™ II series. This device features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain current (Id) of 12 A at 25°C. With a maximum power dissipation of 100 W (Tc) and a low on-resistance (Rds On) of 320 mOhm at 6 A and 10 V, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 30 nC at 10 V and input capacitance (Ciss) of 960 pF at 50 V. This MOSFET utilizes Metal Oxide technology and is supplied in a surface mount D2PAK package (TO-263-3, D2PAK). It is designed for operation up to a junction temperature of 150°C. Applications span power supply units, lighting, and industrial motor control.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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