STB130NS04ZBT4
MOSFET N-CH 33V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics STB130NS04ZBT4 is an N-Channel Power MOSFET from the MESH OVERLAY™ series. This component features a 33V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 80A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 9mOhm at 40A and 10V gate-source voltage (Vgs). It is designed for surface mounting in the TO-263-3, D2PAK package. Key electrical characteristics include a maximum power dissipation of 300W (Tc), a gate charge (Qg) of 80nC at 10V, and input capacitance (Ciss) of 2700pF at 25V. This MOSFET is suitable for applications in automotive and industrial power management. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: MESH OVERLAY™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | Clamped |
| Drain to Source Voltage (Vdss) | 33 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
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