STB130N6F7
MOSFET N-CH 60V 80A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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The STMicroelectronics STB130N6F7 is an N-channel STripFET™ F7 series power MOSFET. This device features a 60V drain-to-source voltage and a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The extremely low on-resistance of 5mOhm is achieved at 40A and 10V gate drive. Key characteristics include a gate charge of 42nC at 10V and input capacitance of 2600pF at 25V. This MOSFET is provided in a TO-263 (D2PAK) surface-mount package, suitable for demanding automotive and industrial applications. Its robust design and high current handling capabilities make it ideal for power switching and DC-DC conversion circuits.
Additional Information
Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 25 V |
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