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STB130N6F7

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STB130N6F7

MOSFET N-CH 60V 80A D2PAK

Manufacturer: STMicroelectronics

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The STMicroelectronics STB130N6F7 is an N-channel STripFET™ F7 series power MOSFET. This device features a 60V drain-to-source voltage and a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 160W (Tc). The extremely low on-resistance of 5mOhm is achieved at 40A and 10V gate drive. Key characteristics include a gate charge of 42nC at 10V and input capacitance of 2600pF at 25V. This MOSFET is provided in a TO-263 (D2PAK) surface-mount package, suitable for demanding automotive and industrial applications. Its robust design and high current handling capabilities make it ideal for power switching and DC-DC conversion circuits.

Additional Information

Series: STripFET™ F7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Rds On (Max) @ Id, Vgs5mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)160W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageTO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V

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