STB12NM60N-1
MOSFET N-CH 600V 10A I2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series STB12NM60N-1 is a 600V N-Channel Power MOSFET. This component features a continuous drain current of 10A (Tc) and a maximum power dissipation of 90W (Tc). The STB12NM60N-1 is housed in an I2PAK (TO-262-3 Long Leads) package, suitable for through-hole mounting. Key electrical characteristics include a Vgs(th) of 4V at 250µA, a maximum gate charge (Qg) of 30.5 nC at 10V, and input capacitance (Ciss) of 960 pF at 50V. The on-resistance (Rds On) is a maximum of 410mOhm at 5A and 10V. This MOSFET is designed for applications in power supplies, lighting, and industrial motor control. It operates across a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage of ±25V.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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