STB12NM60N
MOSFET N-CH 600V 10A D2PAKManufacturer: STMicroelectronics
Categories: Single FETs, MOSFETs
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STMicroelectronics MDmesh™ II series N-channel Power MOSFET, part number STB12NM60N. This device features a 600 V drain-source voltage and a continuous drain current of 10 A at 25°C case temperature, with a maximum power dissipation of 90 W. The STB12NM60N is offered in a TO-263-3, D2PAK surface mount package, delivered on tape and reel. Key electrical characteristics include a maximum Rds(on) of 410 mO at 5 A and 10 V, and a gate charge (Qg) of 30.5 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 960 pF at 50 V. This MOSFET is suitable for applications in high-voltage power conversion, motor control, and industrial power supplies.
Additional Information
Series: MDmesh™ IIRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 410mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 30.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 50 V |
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